High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy.
Autor: | Antreasyan, A., Garbinski, P.A., Mattera, V.D., Temkin, H., Abeles, J.H., Filipe, J. |
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Zdroj: | 1987 International Electron Devices Meeting; 1987, p611-614, 4p |
Databáze: | Complementary Index |
Externí odkaz: |