High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy.

Autor: Antreasyan, A., Garbinski, P.A., Mattera, V.D., Temkin, H., Abeles, J.H., Filipe, J.
Zdroj: 1987 International Electron Devices Meeting; 1987, p611-614, 4p
Databáze: Complementary Index