A trench transistor cross-point DRAM cell.

Autor: Richardson, W.F., Bordelon, D.M., Pollack, G.P., Shah, A.H., Malhi, S.D.S., Shichijo, H., Banerjee, S.K., Elahy, M., Womack, R.H., Wang, C.-P., Gallia, J., Davis, H.E., Chatterjee, P.K.
Zdroj: 1985 International Electron Devices Meeting; 1985, p714-717, 4p
Databáze: Complementary Index