EEPROM Cell with HB (One Half Barrier Height) Oxide for VLSI.
| Autor: | Nozawa, Hiroshi, Matsukawa, Naohiro, Morita, Shigeru, Miyamoto, Jun-ichi, Iizuka, Tetsuya |
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| Zdroj: | 1984 Symposium on VLSI Technology Digest of Technical Papers; 1984, p42-43, 2p |
| Databáze: | Complementary Index |
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