Fully optical and electrically interfaced, monolithic 1 × 12 array of In0.53Ga0.47As/InP p-i-n photodiodes.
| Autor: | Brown, M.G., Forrest, S.R., Hu, P.H.-S., Kaplan, D.R., Koza, M., Ota, Y., Potopowicz, J.R., Seabury, C.W., Washington, M.A. |
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| Zdroj: | 1984 International Electron Devices Meeting; 1984, p727-728, 2p |
| Databáze: | Complementary Index |
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