High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier.
| Autor: | Chang, T.Y., Behringer, R.E., Howard, R.E., Liao, A.S.H., Jackel, L.D., Caridi, E.A., Skocpol, W.J., Epworth, R.W. |
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| Zdroj: | 1984 International Electron Devices Meeting; 1984, p356-359, 4p |
| Databáze: | Complementary Index |
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