| Autor: |
Zhao, Hongbin, Tu, Hailing, Wei, Feng, Xiong, Yuhua, Zhang, Xinqaing, Du, Jun |
| Předmět: |
|
| Zdroj: |
Physica Status Solidi - Rapid Research Letters; Nov2013, Vol. 7 Issue 11, p1005-1008, 4p |
| Abstrakt: |
We investigated the characteristics and the mechanism of Pt/La2O3/Pt resistance switching memory with a set of measurements. The La2O3 films were determined as nano-poly-crystalline (diameter of the nanocrystals 5-10 nm) by XRD and HRTEM analysis. The Pt/La2O3/Pt device exhibited excellent resistive switching properties, including low switching voltage (<2 V), large low/high resistance ratio (>108), and good cycling endurance property. The conduction mecha- nisms of the Pt/La2O3/Pt device were revealed with current-voltage characteristics, which are different in the low and high resistance states. Furthermore, XPS analysis and temperature-dependent resistance measurement in the low resistance state showed that the conducting filaments in the Pt/La2O3/Pt device are mainly affected by oxygen defects rather than metallic La. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text