Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°C.

Autor:	Anfimov, I. M., Kobeleva, S. P., Malinkovich, M. D., Shchemerov, I. V., Toporova, O. V., Parkhomenko, Yu. N.
Předmět:	SILICON films ELECTRIC conductivity NANOCOMPOSITE materials CARBON films TUNGSTEN METAL inclusions TEMPERATURE effect
Zdroj:	Russian Microelectronics; Dec2013, Vol. 42 Issue 7, p488-491, 4p
Abstrakt:	The temperature dependences of the specific electroconductivity of silicon-carbon films with nanosized tungsten inclusions were studied. The electroconductivity of specimens within a temperature range of 20–200°C was measured by the contact method. The electroconductivity of films with a room-temperature specific electroconductivity of 0.03-15 Ω cm was shown to grow with increasing temperature and have two componentsthermoactivation and constant, presumably, of a tunnel character. The contribution of the tunnel component grew from 40 to 80% with an increase in the tungsten concentration in a film and a simultaneous decrease in the activation energy from 0.1 to 0.06 eV. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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