| Autor: |
Khachar, Uma, Solanki, P. S., Kansara, Sanjay B., Choudhary, R. J., Phase, D. M., Kuberkar, D. G., Shah, N. A. |
| Zdroj: |
IEEE Transactions on Nanotechnology; Nov2013, Vol. 12 Issue 6, p915-918, 4p |
| Abstrakt: |
PLD grown ZnO/La0.7Sr 0.3MnO3 /SrTi0.998Nb0.002O3 nanostructured heterostructure has been studied for its nanoelectronic properties at room temperature under zero applied field. XRD φ-scan reveals the epitaxial growth of La0.7Sr0.3MnO3 (LSMO) film, while the transport of 10-nm LSMO manganite layer can be tuned with applied electric field using various field effect configurations. 10-nm LSMO layer shows a large change in resistance with the application of voltage, i.e., exhibiting colossal electroresistance (CER) ∼ 100% (negative) and large positive electroresistance (ER) ∼ 2683% under 4.5 V at room temperature. The variation scenario in 10-nm LSMO transport has been discussed on the basis of electric-field-induced modifications in the charge carrier density and electronic states. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
