| Autor: |
Kujofsa, T., Antony, A., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E. |
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| Zdroj: |
Journal of Electronic Materials; Dec2013, Vol. 42 Issue 12, p3408-3420, 13p |
| Abstrakt: |
We present design equations for error function (or “S-graded”) graded buffers for use in accommodating lattice mismatch of heteroepitaxial semiconductor devices. In an S-graded metamorphic buffer layer the composition and lattice mismatch profiles follow a normal cumulative distribution function. Minimum-energy calculations suggest that the S-graded profile may be beneficial for control of defect densities in lattice-mismatched devices because they have several characteristics which enhance the mobility and glide velocities of dislocations, thereby promoting long misfit segments with relatively few threading arms. First, there is a misfit-dislocation-free zone (MDFZ) adjacent to the interface, which avoids dislocation pinning defects associated with substrate defects. Second, there is another MDFZ near the surface, which reduces pinning interactions near the device layer which will be grown on top. Third, there is a large built-in strain in the top MDFZ, which enhances the glide of dislocations to sweep out threading arms. In this paper we present approximate design equations for the widths of the MDFZs, the built-in strain, and the peak misfit dislocation density for a general S-graded semiconductor with diamond or zincblende crystal structure and (001) orientation, and show that these design equations are in fair agreement with detailed numerical energy-minimization calculations for ZnS ySe 1−y/GaAs (001) heterostructures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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