| Autor: |
Paidi, Vamsi, Shouxuan Xie, Coffie, Robert, Moran, Brendan, Heikman, Sten, Keller, Stacia, Chini, Alessandro, DenBaars, Steven P., Mishra, Umesh K., Long, Stephen, Rodwell, Mark J.W. |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Microwave Theory & Techniques; Feb2003 Part 2 of 2 Parts, Vol. 51 Issue 2, p643, 10p, 11 Black and White Photographs, 7 Diagrams, 18 Graphs |
| Abstrakt: |
Reports on the high linearity and high efficiency of class-B power amplifiers in GaN electron-mobility transistor (HEMP) technology. Design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers; Fabrication and testing of common-source class B. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
