Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire.
| Autor: | Shin, Huiyoun, Jeon, Kisung, Jang, Youngil, Gang, Mingu, Choi, Myungshin, Park, Wonhwa, Park, Kyuho |
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| Zdroj: | Journal of the Korean Physical Society; Oct2013, Vol. 63 Issue 8, p1621-1624, 4p |
| Databáze: | Complementary Index |
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