| Autor: |
Kuzmenko, A. P., Timakov, D. I., Abakumov, P. V., Dobromyslov, M. B., Odnodvorets, L. V. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2013, Vol. 5 Issue 3, p03024-1-03024-5, 5p |
| Abstrakt: |
Flexural elastic deformations of single-crystal silicon with microspectral Raman scattering are studied. The investigation results are given on nano-scaled sign-changing shifts of the main peak of the microspectral Raman scattering within the single-crystal silicon cantilever beam under influence of flexural stress. The maximum value of Raman shift characteristic of silicon peak equal to 518 cm-1, when elasticity still remains, amounted to 8 cm-1. The qualitative explanation of increase in strength of the cantilever beam due to its small thickness (2 μm) is provided, which is in accord with predictions of real-world physical parameters that were obtained in software environment SolidWorks with the module SimulationXpress. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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