Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon.

Autor:	Bayu Aji, Leonardus B., Ruffell, S., Haberl, B., Bradby, J.E., Williams, J.S.
Předmět:	PHASE transitions ION implantation AMORPHOUS silicon INDENTATION (Materials science) ANNEALING of metals
Zdroj:	Journal of Materials Research; Apr2013, Vol. 28 Issue 8, p1056-1060, 5p
Abstrakt:	The probability for amorphous silicon (a-Si) to phase transform under indentation testing is statistically determined as a function of annealing temperature from the probability of a pop-out event occurring on the unloading curve. Raman microspectroscopy is used to confirm that the presence of a pop-out event during indentation is a clear signature that a-Si undergoes phase transformation. The probability for such a phase transformation increases with annealing temperature and reaches 100% at a temperature of 340 °C, a temperature well before the temperature where the average bond-angle distortion is fully minimized. This suggests that multiple processes are occurring during full relaxation. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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