| Autor: |
Hu, X., Deng, J., Pala, N., Gaska, R., Shur, M. S., Chen, C. Q., Yang, J., Simin, G., Khan, M. A., Rojo, J. C., Schowalter, L. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/24/2003, Vol. 82 Issue 8, p1299, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We report on the performance of AlGaN/GaN/A1N heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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