Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy.
| Autor: | Yaguchi, Hiroyuki, Kitamura, Yoshihiro, Nishida, Kenji, Iwahashi, Yohei, Hijikata, Yasuto, Yoshida, Sadafumi |
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| Zdroj: | Physica Status Solidi (C); 2005, Vol. 2 Issue 7, p2267-2270, 4p |
| Databáze: | Complementary Index |
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