WSiN cap for Ohmic contacts to n-GaN with better morphology.
| Autor: | Lau, W. S., Singh, B. P., Gunawan, S., Tan, Joy B. H., Jiang, Y. Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A. D. |
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| Zdroj: | Physica Status Solidi (C); 2005, Vol. 2 Issue 7, p2548-2550, 3p |
| Databáze: | Complementary Index |
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