Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition.

Autor: Heikman, Sten, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Zdroj: Physica Status Solidi (C); 2003, Vol. 0 Issue 7, p2557-2561, 5p
Databáze: Complementary Index