Edge-Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire.

Autor: Florescu, D.I., Passman, E.P., Lu, D., Lee, D.S., Parekh, A., Ramer, J.C., Ting, S.M., Merai, V., Albert, B., Stall, R.A.
Zdroj: Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p524-527, 4p
Databáze: Complementary Index