Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy.
Autor: | Funato, M., Shimogami, K., Ujita, S., Kawaguchi, Y., Fujita, Sz., Fujita, Sg. |
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Zdroj: | Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p434-437, 4p |
Databáze: | Complementary Index |
Externí odkaz: |