Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy.

Autor: Funato, M., Shimogami, K., Ujita, S., Kawaguchi, Y., Fujita, Sz., Fujita, Sg.
Zdroj: Physica Status Solidi (C); 2003, Vol. 0 Issue 1, p434-437, 4p
Databáze: Complementary Index