Material properties of GaN grown by MOCVD.

Autor: Liu, Wei, Li, Ming-Fu, Feng, Zhe-Chuan, Chua, Soo-Jin, Akutsu, Nakao, Matsumoto, Koh
Zdroj: Surface & Interface Analysis: SIA; 1999, Vol. 28 Issue 1, p150-154, 5p
Databáze: Complementary Index
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