| Autor: |
Shuling Wang, Feng Ma, Xiaowei Li, Sidhu, Rubin, XiaoGuang Zheng, Xiaoguang Sun, Holmes, Archie L., Campbell, Joe C. |
| Předmět: |
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| Zdroj: |
IEEE Journal of Quantum Electronics; Feb2003, Vol. 39 Issue 2, p375, 4p, 1 Diagram, 6 Graphs |
| Abstrakt: |
We report avalanche photodiodes with a "centered-well" multiplication region that have achieved high gain, low noise, and low dark current. The multiplication region consists of an ∼ 80 nm-thick Al[sub 0.2]Ga[sub 0.8]As layer sandwiched between two thin (10 ∼ 20 nm) layers of Al[sub 0.6] Ga[sub 0.4] As. Monte Carlo simulation shows the beneficial effect of spatial modulation of the ionization rates in this structure compared to homo junctions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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