Autor: |
Ali, Khaled Ben, Neve, Cesar Roda, Gharsallah, Ali, Raskin, Jean-Pierre |
Předmět: |
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Zdroj: |
IEEE Transactions on Electron Devices; Oct2013, Vol. 60 Issue 10, p3478-3484, 7p |
Abstrakt: |
A continuous-wave mode optically controlled coplanar waveguide radio frequency (RF) switch on high-resistivity silicon substrate with and without trap-rich polysilicon (poly-Si) layer is investigated. Because of the local poly-Si trap-rich layer, we experimentally show the important reduction of optical crosstalk without degrading the photo-controlled RF switch performance. A photo-induced plasma confinement by locally etching the poly-Si layer to control the photogenerated free carriers and their lateral diffusion is realized. Optical crosstalk between two coplanar waveguide RF switches is reduced by >20~dB at 20 GHz. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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