| Autor: |
Camarchia, Vittorio, Rubio, Jorge Jiulian Moreno, Pirola, Marco, Quaglia, Roberto, Colantonio, Paolo, Giannini, Franco, Giofre, Rocco, Piazzon, Luca, Emanuelsson, Thomas, Wegeland, Tobias |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices; Oct2013, Vol. 60 Issue 10, p3592-3595, 4p |
| Abstrakt: |
The potentialities of GaN monolithic technology for the growing microwave backhaul power amplifier market are discussed in this paper. To support this discussion, two GaN monolithic Doherty power amplifiers for 7 GHz backhaul applications are presented. They exhibit 5 W output power, with almost 10 dB gain and high efficiency at 7 dB output power back-off. In particular, one module has been optimized for maximum efficiency at center frequency (47% at 7 dB output power back-off), while the other for high efficiency on a larger bandwidth (15% fractional bandwidth). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
