| Autor: |
Turishchev, S. Yu., Terekhov, V. A., Koyuda, D. A., Pankov, K. N., Ershov, A. V., Grachev, D. A., Mashin, A. I., Domashevskaya, E. P. |
| Předmět: |
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| Zdroj: |
Semiconductors; Oct2013, Vol. 47 Issue 10, p1316-1323, 8p |
| Abstrakt: |
Al 2O 3/SiO x/Al 2O 3/SiO x/…/Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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