| Autor: |
Kim, D. J., Lu, H., Ryu, S., Lee, S., Bark, C. W., Eom, C. B., Gruverman, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/30/2013, Vol. 103 Issue 14, p142908, 4p, 4 Graphs |
| Abstrakt: |
Resistive properties of Co/BaTiO3/La2/3Sr1/3MnO3 ferroelectric tunnel junctions on (110) NdGaO3 substrates are investigated. A notable characteristic of these junctions is the memristive behavior-a dependence of resistance on amplitude and duration of a writing pulse, which is attributed to field-induced charge accumulation at the Co/BaTiO3 interface. It is found that retention of the resistance states depends on the thickness of the ferroelectric barrier: the junctions with the thinnest 4-unit-cell-thick BaTiO3 barrier exhibit significant relaxation of the low resistance state while the junctions with thicker barriers exhibit stable resistance. It is proposed that, in a thinner barrier, a larger depolarizing field triggers a faster dissipation of the accumulated charges, resulting in a recovery of interfacial tunnel barrier height and gradual transition from a low to a high resistance state. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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