Third-order nonlinearity induced lateral-mode frequency locking and beam instability in the...

Autor:	Fu, Xiaoli, Tan, G.L., Gordon, R., J. M. Xu
Předmět:	SEMICONDUCTOR lasers
Zdroj:	IEEE Journal of Quantum Electronics; Aug98, Vol. 34 Issue 8, p1447, 8p, 1 Chart, 6 Graphs
Abstrakt:	Presents information on the effects of carrier-induced third-order nonlinearities on narrow-ridge semiconductor lasers. Information on the characteristics of beam steering.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu