| Autor: |
Bickford, Justin R., Yu, P. K. L., Lau, S. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2013, Vol. 114 Issue 12, p123515, 6p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 2 Graphs |
| Abstrakt: |
Isothermal solidification metal waferbonding is well suited to heterogeneously integrate high-speed/high-power density RF and microwave devices with standard CMOS technology. It is capable of forming efficient electrical and thermal interconnects as well as bonded-microstrip waveguide structures. Accurate means of characterizing the electrical, thermal, and microwave properties of these structures are necessary to enable heterogeneous monolithic microwave integrated circuits (HMMICs). This article describes a bond layer thermal conductivity measurement method, a bond-metal microstrip microwave waveguide characterization method, and the fabrication method developed to support the measurement structures. As a result, an In-Pd bond alloy thermal conductivity of 2.51 W/(m K) was measured for GaAs devices bonded to Si. Also, an optimized bonded-microstrip waveguide was simulated based upon measured microwave results of the measurement structure, projecting a 0.56 dB/mm loss, a microwave index of 2.91, and a characteristic impedance of 41.3+6i Ω at 15 GHz, thus advocating this approach as a means of realizing high power HMMICs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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