| Autor: |
Slobodchikov, S. V., Salikhov, Kh. M., Samorukov, B. E. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Feb2003, Vol. 37 Issue 2, p183, 4p |
| Abstrakt: |
The mechanism of charge transport in Fe-p-InP diode structures and its dependences on illumination and magnetic field were investigated. It is shown that a double injection in a drift approximation into a highresistivity π-layer is the main mechanism of charge transport. Phenomena of the suppression of a forward current with light (negative photoresponse) and a sharp increase in the differential resistance in a magnetic field are observed and discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
