| Autor: |
Chin, Matthew L., Periasamy, Prakash, O'Regan, Terrance P., Amani, Matin, Tan, Cheng, O'Hayre, Ryan P., Berry, Joseph J., Osgood, Richard M., Parilla, Philip A., Ginley, David S., Dubey, Madan |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2013, Vol. 31 Issue 5, p051204, 8p |
| Abstrakt: |
The authors report the performance of various planar metal-insulator-metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt are studied in conjunction with Nb as the anode (M1) and Nb2O5 (I) as the dielectric. The cathode materials selections were based on results from a prior rapid-screening study that employed a bent-wire metal cathode point-contact method. Planar devices, to enable analysis using standard MIM diode models, were fabricated with the resultant current density-voltage data obtained at both room temperature and 77 K. The tunnel barrier heights and dielectric properties for these systems were extracted from the modeling results. Nb/Nb2O5/Pt MIM diodes showed the best performance with an asymmetry ratio greater than 7700, a nonlinearity value of 4.7, and a responsivity of 16.9, all at 0.5 V and 300 K. These results confirm prior rapid-screening efforts and further validate the Nb/Nb2O5/Pt system in particular as a promising MIM architecture due to the low barrier height of the junction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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