An Analytical Model of the Diffusion Redistribution of Ion-Implanted Impurity in the Gate Region of a MOS Transistor.
| Autor: | Bormontov, E. N., Bryazgunov, Yu. I., Lezhenin, V. P. |
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| Zdroj: | Technical Physics Letters; Jan2003, Vol. 29 Issue 1, p47, 4p |
| Abstrakt: | The problem of a diffusion redistribution of an ion-implanted impurity in the silicon dioxide-silicon system in the course of thermal annealing is solved with allowance for the difference in the parameters of the two media and for the impurity segregation at the interface. [ABSTRACT FROM AUTHOR] |
| Databáze: | Complementary Index |
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