| Autor: |
Utrilla, A. D., Ulloa, J. M., Guzman, A., Hierro, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/9/2013, Vol. 103 Issue 11, p111114, 4p, 5 Graphs |
| Abstrakt: |
Type I and type II band alignment InAs/GaAs quantum dot laser diodes (LD) are demonstrated using a 5-nm-thick GaAsSb capping layer with moderate or high Sb contents. The threshold current density, external differential quantum efficiency, and characteristic temperature substantially improve when Sb is used in the capping layer. Nevertheless, in the type II LD, lasing arises from type I-like excited states with much shorter lasing wavelengths than expected. This is likely related to the observed inhibition of the ground state transition in the spontaneous emission, which would also reduce the radiative current and, therefore, the threshold current. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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