| Autor: |
Fromm, F., Oliveira Jr, M. H., Molina-Sánchez, A., Hundhausen, M., Lopes, J. M. J., Riechert, H., Wirtz, L., Seyller, T. |
| Předmět: |
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| Zdroj: |
New Journal of Physics; 2013, Vol. 15 Issue 4, p1-11, 11p |
| Abstrakt: |
We report a Raman study of the so-called buffer layer with (6 √ 3× 6 √ 3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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