A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz.
| Autor: | Candra, Panglijen, Jain, Vibhor, Cheng, Peng, Pekarik, John, Camillo-Castillo, R., Gray, Peter, Kessler, Thomas, Gambino, Jeffrey, Dunn, James, Harame, David |
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| Zdroj: | 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC); 2013, p381-384, 4p |
| Databáze: | Complementary Index |
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