| Autor: |
Yunlong Cui, Bhattacharya, Pijush, Burger, Arnold, Johnstone, D. |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 2013, Vol. 46 Issue 30, p1-7, 7p |
| Abstrakt: |
Defect levels in semi-insulating AgGa0.6In0.4Se2 crystals grown by the horizontal Bridgman technique and annealed in vacuum at 750 °C for 20 days have been characterized using photo-induced current transient spectroscopy (PICTS) and low-temperature photoluminescence (PL). PICTS measurements revealed four electron-related defects located at (0.027 ± 0.008), (0.051 ± 0.005), (0.31 ± 0.01) and (0.98 ± 0.01) eV and two hole-related defects at (0.040 ± 0.012) and (0.73 ± 0.02) eV. Free exciton (FE) and donor--acceptor pairs emissions were observed in low-temperature PL spectra. The defect levels measured from PICTS are consistent with those from PL. The compositional uniformity of the crystals was investigated by employing micro-PL mapping of FE at 77K. The temperature coefficients of the band-gap energies were estimated and discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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