Conductivity and barrier effects in thin-film PZT-based heterostructures, depending on the conditions of synthesis.

Autor: Kamenshchikov, M., Solnyshkin, A., Bogomolov, A., Pronin, I.
Zdroj: Bulletin of the Russian Academy of Sciences: Physics; Aug2013, Vol. 77 Issue 8, p1035-1037, 3p
Abstrakt: Electrical conductivity and dielectric characteristics in Pt/Pb(Zr,Ti)O/Pt film structures synthesized at different temperatures are studied. Volt-ampere (I-V) and volt-farad (C-V) characteristics are obtained. Asymmetry of the I-V characteristics is revealed, indicating a difference in the potential barriers at the interfaces of the analyzed structures that varies depending on the synthesis conditions. The values of the potential barriers at the Pt/PZT interfaces were calculated from the C-V characteristics. Two key conductivity mechanisms, Ohmic and Poole-Frenkel emission, were noted. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index