Autor: |
Kamenshchikov, M., Solnyshkin, A., Bogomolov, A., Pronin, I. |
Zdroj: |
Bulletin of the Russian Academy of Sciences: Physics; Aug2013, Vol. 77 Issue 8, p1035-1037, 3p |
Abstrakt: |
Electrical conductivity and dielectric characteristics in Pt/Pb(Zr,Ti)O/Pt film structures synthesized at different temperatures are studied. Volt-ampere (I-V) and volt-farad (C-V) characteristics are obtained. Asymmetry of the I-V characteristics is revealed, indicating a difference in the potential barriers at the interfaces of the analyzed structures that varies depending on the synthesis conditions. The values of the potential barriers at the Pt/PZT interfaces were calculated from the C-V characteristics. Two key conductivity mechanisms, Ohmic and Poole-Frenkel emission, were noted. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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