| Autor: |
Xu, Chi, Beeler, Richard T., Jiang, Liying, Grzybowski, Gordon, Chizmeshya, Andrew V. G., Menéndez, José, Kouvetakis, John |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; 2013, Vol. 28 Issue 10, p1-10, 10p |
| Abstrakt: |
We introduce a practical chemical vapor deposition strategy for next-generation Ge-on-Si epitaxy utilizing recently introduced Ge4H10 hydride sources that confer unprecedented deposition efficiencies at very low-temperatures (<400 °C). The corresponding high growth rates produce thick bulk-like Ge films with structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. The use of a pure, single-source compound facilitates the control of residual doping, and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias optical collection efficiencies are higher than obtained from samples fabricated using alternative Ge-on-Si approaches. The reaction pathways leading to the high-yield synthesis of Ge4H10 are identified on the basis of quantum thermochemistry simulations. The results suggest a simple approach to routine synthesis of tetragermane as the main product in quantities sufficient to be deployed as a commercial source. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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