Nanometer size field effect transistors for terahertz detectors.

Autor: Knap, W., Rumyantsev, S., Vitiello, M. S., Coquilla, D., Blin, S., Dyakonova, N., Shur, M., Teppe, F., Tredicucci, A., T. Nagatsuma
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Zdroj: Nanotechnology; 2013, Vol. 24 Issue 21, p1-10, 10p
Abstrakt: Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index