| Autor: |
Repins, I. L., Moutinho, H., Choi, S. G., Kanevce, A., Kuciauskas, D., Dippo, P., Beall, C. L., Carapella, J., DeHart, C., Huang, B., Wei, S. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Aug2013, Vol. 114 Issue 8, p084507, 5p |
| Abstrakt: |
Solar cells based on kesterite absorbers consistently show lower voltages than those based on chalcopyrites with the same bandgap. We use three different experimental methods and associated data analysis to determine minority-carrier lifetime in a 9.4%-efficient Cu2ZnSnSe4 device. The methods are cross-sectional electron-beam induced current, quantum efficiency, and time-resolved photoluminescence. These methods independently indicate minority-carrier lifetimes of a few nanoseconds. A comparison of current-voltage measurements and device modeling suggests that these short minority-carrier lifetimes cause a significant limitation on the voltage produced by the device. The comparison also implies that low minority-carrier lifetime alone does not account for all voltage loss in these devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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