| Autor: |
Yeluri, Ramya, Liu, Xiang, Swenson, Brian L., Lu, Jing, Keller, Stacia, Mishra, Umesh K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Aug2013, Vol. 114 Issue 8, p083718, 5p, 1 Color Photograph, 1 Chart, 6 Graphs |
| Abstrakt: |
A photo-assisted capacitance voltage (C-V) characterization technique for interfaces between positive valence band offset dielectrics (Al2O3, SiO2) and wide bandgap semiconductors is presented. It is shown that the valence band barrier for holes at the interface affects the measurement and a method to extract border trap and interface state density values from the measured C-V curves is suggested. Dielectric-semiconductor interface characterization has been well studied for silicon but the characterization techniques are not transferable to wide bandgap semiconductors, such as GaN and SiC, due to the low minority carrier generation rate. Multiple dielectrics deposited by various techniques have been employed in these devices; but in order to ascertain the most suitable dielectric, an effective characterization technique that works well with dielectrics on wide-bandgap semiconductors is required. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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