| Autor: |
Kim, Bo Sung, Taek Jeong, Yeon, Lee, Doohyoung, Choi, TaeYoung, Jung, Seung-Ho, Whan Choi, June, Yang, Chanwoo, Jo, Kangmoon, Lee, Byung-ju, Park, Eunhye, Na Kim, Doo, Kim, Youngmin, Shin, Sungtae |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/12/2013, Vol. 103 Issue 7, p072110-072110-5, 1p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film transistors with a top-gate staggered structure were fabricated to exhibit field-effect mobility of 2.04 ± 0.28 cm2/Vs at saturation region, threshold voltage (Vth) of 2.15 ± 0.75 V, subthreshold slope of 0.27 ± 0.14 V/dec. and excellent reliability (ΔVth = -4.35 V) for negative bias temperature illumination stress. Based on the performance, a 10.1 in. full-color liquid crystal display was demonstrated by the optimized full photolithography process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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