Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs.
| Autor: | Chatterjee, I., Zhang, E. X., Bhuva, B. L., Fleetwood, D. M., Fang, Y-P., Oates, A. |
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| Zdroj: | 2013 IEEE International Reliability Physics Symposium (IRPS); 2013, pSE.8-SE.8-SE.8.6, 0p |
| Databáze: | Complementary Index |
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