Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology.
| Autor: | Diokh, T., Le-Roux, E., Jeannot, S., Gros-Jean, M., Candelier, P., Nodin, J.F., Jousseaume, V., Perniola, L., Grampeix, H., Cabout, T., Jalaguier, E., Guillermet, M., De Salvo, B. |
|---|---|
| Zdroj: | 2013 IEEE International Reliability Physics Symposium (IRPS); 2013, p5E.4-5E.4-5E.4.4, 0p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|