An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures.

Autor: Yeap, Kong Boon, Gall, Martin, Sander, Christoph, Niese, Sven, Liao, Zhongquan, Ritz, Yvonne, Rosenkranz, Rudiger, Muhle, Uwe, Gluch, Jurgen, Zschech, Ehrenfried, Aubel, Oliver, Beyer, Armand, Hennesthal, Christian, Hauschildt, Meike, Talut, Georg, Poppe, Jens, Vogel, Norman, Engelmann, Hans-Jurgen, Stauffer, Douglas, Major, Ryan
Zdroj: 2013 IEEE International Reliability Physics Symposium (IRPS); 2013, p2F.1-2F.1-2F.1.5, 0p
Databáze: Complementary Index