Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well.

Autor:	Hassan, A. H. A., Mironov, O. A., Dobbie, A., Morris, J. H., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R., Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V., Berkutov, I. B.
Zdroj:	2013 IEEE XXXIII International Scientific Conference Electronics & Nanotechnology (ELNANO); 2013, p51-55, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu