Thermal processing impact on the integrity of HfO2-based high-k gate dielectrics.
| Autor: | Lin, Xuefeng, Morinville, Wendy, Suo, Zhiyong, Zhuang, Kent, Krasinski, Chantelle, Markowitz, Dan, Noehring, Kari, Zhou, Yang, York, Scott, Yapa, Hima, Brown, Jason, Lu, Shifeng |
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| Zdroj: | 2013 IEEE Workshop on Microelectronics & Electron Devices (WMED); 2013, p5-8, 4p |
| Databáze: | Complementary Index |
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