| Autor: |
Li, Shaorui, De Geronimo, Gianluigi, Chen, Wei, D'Anadragora, Alessio, Fried, Jack, Li, Zheng, Pinelli, Donald A., Smith, Graham C., Gaskin, Jessica A., Ramsey, Brian D. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; 7/1/2013 Part 2, Vol. 60 Issue 4, p3057-3062, 6p |
| Abstrakt: |
We present an Application Specific Integrated Circuit (ASIC) for high resolution X-ray spectrometers (XRS) in radiation harsh environment (such as Jovian system). The ASIC was designed to read out signals from low resistivity pixelated Silicon-Drift-Detectors (SDD) to ensure radiation hardness. The readout is done by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW and provides 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, pile-up rejection, and peak detection with analog memory. The readout is sparse and based on a custom low-power tri-stable low-voltage differential signaling digital interface. A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm^2, and dissipates less than 20 mW/cm^2. The ASICs were powered on and irradiated using a beam line with 203 MeV protons, to total doses ranging from 0.25 Mrad to 12 Mrad. Performance degradation due to radiation-induced leakage current was observed to peak around 2 Mrad dose. Critical contributors to the degradation were identified through simulation and measurements, and corresponding circuitry was thus modified to address the issues. Measurements on the radiation-resistant design have shown excellent radiation resistance at total doses ranging from 1 to 8 Mrad. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
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