| Autor: |
Dimitrakis, P., Normand, P., Ioannou‐Sougleridis, V., Bonafos, C., Schamm‐Chardon, S., BenAssayag, G., Iliopoulos, E. |
| Předmět: |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; Aug2013, Vol. 210 Issue 8, p1490-1504, 15p |
| Abstrakt: |
In this paper, we review the fabrication and the electrical characteristics of metal-insulator-semiconductor (MIS) devices with semiconductor quantum dots (QD) embedded into the gate dielectric. Our results originate from experiments performed the last decade and cover Si QDs realized by low-energy ion-beam synthesis (IBS) as well as GaN QDs formed by molecular beam deposition (MBD). Besides the basic capacitance-to-voltage ( C- V) and current-to-voltage ( I- V) characterization, the memory properties of the fabricated MIS devices were investigated in terms of memory window under pulse operation and charge retention. The optimization of Si-QD memory cells is reviewed and a methodology for both the extraction of various device parameters and the identification of mechanisms governing the charge loss process are presented. GaN QDs, which exhibit negative conduction band-offset with respect to the Si conduction band, offer an interesting alternative to Si QDs as discussed herein based on our investigations of GaN-QD capacitors fabricated by a complementary-metal-oxide-semiconductor (CMOS) compatible process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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