| Autor: |
Oshima, Minoru, Ide, Akiko, Mochihara, Akiko, Yoshino, Kenji, Tanikemoto, Yujin, Toyota, Kouji, Inaba, Koichiro, Haga, Ken-ichi, Naka, Toshio, Tokudome, Koichi |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Aug2013, Vol. 10 Issue 7/8, p1015-1018, 4p |
| Abstrakt: |
Non-doped and Ga-doped ZnO film on glass substrate were successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly a-axis orientated according to the results of optical transmittance and X-ray diffraction analysis, respectively. The n-type Ga-doped ZnO films had a low resistivity of 2.3 × 10-3 Ωcm, a carrier concentration of 1.1 × 1020 cm-3 and a mobility of 10 cm2 (Vs)-1 at an optimal Ga content of 2 at% upon UV irradiation. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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