| Autor: |
Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Lin, Youxi, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy, Svensson, Stefan |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/29/2013, Vol. 103 Issue 5, p051120, 3p, 3 Graphs |
| Abstrakt: |
InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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