Graded-gap AlInN Gunn diodes.

Autor: Storozhenko, I. P., Yaroshenko, A. N., Kaydash, M. V.
Předmět:
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2012, Vol. 15 Issue 2, p176-180, 5p
Abstrakt: The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index